Researchers at Chalmers University of Technology, led by Professor Saroj P. Dash and Dr. Bing Zhao, have unveiled a significant development in memory technology. Their study, introduces a novel two-dimensional (2D) material that exhibits the coexistence of ferromagnetic and antiferromagnetic states within a single layer. This integration allows for the manipulation of electron spins without the need for external magnetic fields, potentially reducing energy consumption in memory devices by up to tenfold.
Zhao, B., Bainsla, L., Ershadrad, S., Zeng, L., Ngaloy, R., Svedlindh, P., Olsson, E., Sanyal, B., & Dash, S. P. (2025). Coexisting Non‐Trivial Van der Waals Magnetic Orders Enable Field‐Free Spin‐Orbit Torque Magnetization Dynamics. Advanced Materials, 37(37). https://doi.org/10.1002/adma.202502822
Traditionally, memory devices rely on the alignment of electron spins to represent binary data. Ferromagnetic materials, where electron spins align in the same direction, and antiferromagnetic materials, where adjacent spins point in opposite directions, have been utilized separately to achieve desired magnetic properties. However, integrating these two states within a single material has been a challenge.
Professor Saroj P. Dash from Chalmers University of Technology stated,
“A material with multiple magnetic behaviors eliminates interface issues in multilayer stacks and is far easier to manufacture. Previously, stacking multiple magnetic films introduced problematic seams at the interfaces, which compromised reliability and complicated device production.”
The Chalmers team’s innovation lies in their ability to engineer a 2D material that naturally supports both magnetic states. By utilizing van der Waals forces between atomic layers, they have created a structure where ferromagnetic and antiferromagnetic regions coexist, enabling efficient spin manipulation without external magnetic fields.
This breakthrough holds promise for enhancing the performance of memory devices, particularly in applications requiring high-speed data processing and low power consumption. By eliminating the need for external magnetic fields, the proposed 2D material could lead to memory chips that are not only more energy-efficient but also simpler to manufacture, as they reduce the complexity associated with multilayered magnetic structures.
While the Chalmers team’s findings are promising, further research is necessary to fully understand the long-term stability and scalability of these 2D magnetic materials in practical applications. Continued collaboration between material scientists and engineers will be crucial in translating this discovery into commercially viable memory technologies.
In conclusion, the development of 2D materials that support coexisting magnetic states represents a significant step forward in the quest for energy-efficient memory devices. As research progresses, these materials may play a pivotal role in shaping the future of data storage and processing technologies.
Adrian graduated with a Masters Degree (1st Class Honours) in Chemical Engineering from Chester University along with Harris. His master’s research aimed to develop a standardadised clean water oxygenation transfer procedure to test bubble diffusers that are currently used in the wastewater industry commercial market. He has also undergone placments in both US and China primarely focused within the R&D department and is an associate member of the Institute of Chemical Engineers (IChemE).
