Researchers at the Massachusetts Institute of Technology (MIT) have developed a magnetic transistor that could significantly enhance the energy efficiency and performance of electronic circuits. This advancement, introduces a novel approach to transistor design by integrating magnetic properties into semiconductor materials.
Chou, C.-T., Park, E., Ingla-Aynes, J., Klein, J., Mosina, K., Moodera, J. S., Sofer, Z., Ross, F. M., & Liu, L. (2025). Large Magnetoresistance in an Electrically Tunable van der Waals Antiferromagnet. Physical Review Letters, 135(13), 136702. https://doi.org/10.1103/hpmq-rnh4
The team, led by graduate student Chung-Tao Chou and Professor Luqiao Liu, replaced the traditional silicon in the transistor’s surface layer with chromium sulfur bromide (CrSBr), a two-dimensional magnetic semiconductor. CrSBr’s unique structure allows for precise switching between two magnetic states, which in turn alters its electronic behavior, enabling low-energy operation. Unlike many other two-dimensional materials, CrSBr remains stable in air, making it a practical choice for electronic applications.
Chung-Tao Chou from MIT stated,
“People have known about magnets for thousands of years, but there are very limited ways to incorporate magnetism into electronics. We have shown a new way to efficiently utilize magnetism that opens up a lot of possibilities for future applications and research”.
This magnetic transistor demonstrates a tenfold increase in current switching strength compared to existing magnetic designs. The ability to switch or amplify the electric current by a factor of 10 allows for faster and more reliable signal processing. Additionally, the magnetic properties of CrSBr enable the transistor to store information, effectively combining logic and memory functions into a single device. This integration simplifies circuit design and opens up new possibilities for high-performance electronics.
The researchers employed a novel fabrication technique to construct the transistor. Instead of using solvents or glue, they utilized tape to pick up a thin layer of CrSBr and transferred it onto a silicon substrate. This method eliminates potential contamination risks, ensuring a clean surface essential for transistor performance.
The development of this magnetic transistor represents a significant step toward more energy-efficient and compact electronic devices. By leveraging the magnetic properties of materials like CrSBr, engineers can design circuits that consume less power and operate at higher speeds. This innovation has the potential to impact various applications, including computing, communications, and memory storage technologies.
As research in this area progresses, the integration of magnetic semiconductors into electronic devices could lead to the development of more sustainable and high-performance technologies, marking a notable advancement in the field of electronics engineering.
Adrian graduated with a Masters Degree (1st Class Honours) in Chemical Engineering from Chester University along with Harris. His master’s research aimed to develop a standardadised clean water oxygenation transfer procedure to test bubble diffusers that are currently used in the wastewater industry commercial market. He has also undergone placments in both US and China primarely focused within the R&D department and is an associate member of the Institute of Chemical Engineers (IChemE).
