Turning Dislocations Into Quantum Links: A New Approach to Scalable NV Qubits

January 16, 2026

Building scalable quantum technologies depends not only on improving individual qubits, but also on finding practical ways to connect them without degrading their fragile quantum states. In a recent theoretical study, researchers from the University of Chicago and The Ohio State University propose an unconventional solution: using crystal defects themselves as structured pathways for quantum information.

The work, led by Giulia Galli, professor at the University of Chicago Pritzker School of Molecular Engineering and the Department of Chemistry, alongside Maryam Ghazisaeidi, professor at The Ohio State University, examines how line defects known as dislocations can be repurposed to organize and connect solid-state qubits. Rather than treating these defects as sources of noise or failure, the study shows they can act as stable, one-dimensional frameworks for quantum systems.

Zhang, C., Yu, V. W., Jin, Y., Nagura, J., Genlik, S. P., Ghazisaeidi, M., & Galli, G. (2026). Towards dislocation-driven quantum interconnects. Npj Computational Materials. https://doi.org/10.1038/s41524-025-01945-3

The research focuses on nitrogen-vacancy (NV) centers in diamond, one of the most established platforms for solid-state qubits due to their long spin coherence times and optical addressability at room temperature. NV centers typically form at random positions within a crystal, making controlled qubit placement and coupling a major engineering challenge. The new study suggests that crystal dislocations naturally attract NV centers, creating aligned chains that could function as quantum interconnects.

Giulia Galli, professor at the University of Chicago, stated,

“While not all defect arrangements are suitable for quantum operations, the results show that a substantial fraction meet the requirements for qubit functionality.”

Using large-scale first-principles simulations, the team modeled the atomic and electronic structure of NV centers positioned near diamond dislocations. These calculations revealed that many NV centers remain stable in their desired charge and spin states when located near dislocation cores. In several configurations, their optical properties were preserved, allowing standard optical initialization and readout techniques to remain viable.

More unexpectedly, the simulations predicted that certain NV configurations near dislocations exhibit improved quantum coherence compared to NV centers in defect-free diamond. This enhancement arises from symmetry breaking at the dislocation core, which gives rise to so-called clock transitions. These transitions reduce sensitivity to magnetic noise from the surrounding environment, a persistent obstacle in solid-state quantum systems.

The computational work was enabled by GPU-accelerated codes developed through the Midwest Integrated Center for Computational Materials, allowing the researchers to model quantum behavior at a scale that has previously been inaccessible. According to the authors, this level of detail was essential for capturing the complex interactions between electronic states, lattice strain, and spin coherence near dislocation cores.

In addition to coherence and stability, the study provides detailed predictions of optical spectra and magnetic resonance signatures associated with viable NV–dislocation configurations. These predictions are intended to guide experimental efforts, helping researchers identify which defect arrangements are suitable for quantum applications and which are not. While not all configurations meet the requirements for qubit operation, the analysis indicates that a meaningful fraction do.

The broader implication of the work is a shift in how materials engineers may approach quantum device design. Instead of attempting to eliminate defects entirely, the study suggests that specific types of defects can be deliberately incorporated and controlled to provide structure and scalability. Dislocations, which extend through a crystal as continuous lines, offer a built-in geometry for arranging qubits in ordered arrays.

Although the current results are theoretical, the approach is not limited to diamond alone. The authors note that similar strategies could be explored in other solid-state qubit platforms where defects and strain fields can be engineered with precision. If validated experimentally, dislocation-based quantum interconnects could offer a practical route toward larger and more reliable quantum architectures.

As quantum technologies move from laboratory demonstrations toward engineered systems, the work highlights an emerging principle: imperfections in materials are not always liabilities. With the right theoretical and computational tools, they may become essential components of future quantum hardware.

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